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t ga2583 2.7 C 3.7ghz 10w gan power amplifier preliminary datasheet: rev b 02 - 20 - 1 5 - 1 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com p ad configuration p ad no. symbol 1 rf in 2 v g 1 3, 5 v g 2 4 v d 1 6 v d2 7 rf out applications ? commercial and military ra dar general description triquints tga2583 is a n s - b and mmic a mplifier fabricated on triquint s production 0.25um gan on sic process ( tqgan25 ) . covering 2.7 - 3. 7 ghz, the tga2583 provides 1 0w of saturated output power and 33db of small signal gain while achieving 54 % power - added efficiency. higher power can be achieved at the expense of pae by increasing the drain voltage . t he tg a2583 is ideal for phase array s - band radars and c an support both short pulse and cw conditions. b oth rf ports have integrated dc blocking capacitors and a r e fully matched to 50ohms . lead - free and rohs compliant. ordering information part eccn description tga2 583 e ar99 2.7 C 3. 7 ghz 1 0 w gan power amplifier product features ? frequency range: 2.7 C 3. 7 ghz ? p sat : 40 .5 dbm at 25v ? pae : 54 % ? small signal gain: 33db ? input return loss: >18 db ? output return loss: >12db ? bias : v d = 25 - 32 v (cw or pulsed) , i dq = 1 7 5 ma , v g = - 2. 3 v typical ? pulsed v d : pp = 1ms, dc = 1 0% ? chip dimensions: 3.0 x 1.9 x 0.10 mm functional block diagram j1 rf in j2 rf out 1 3 2 5 4 7 6
t ga2583 2.7 C 3.7ghz 10w gan power amplifier preliminary datasheet: rev b 02 - 20 - 1 5 - 2 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com absolute maximum ratings parameter value drain voltage (v d ) 40 v gate voltage range (v g ) - 8 to 0v drain current (i d 1 ) 2 85 ma drain current (i d 2 ) 1250ma gate current (i g 1 ) - 1.4 to 2.8 ma gate current (i g 2 ) - 4.0 to 8.4ma power dissipation (p diss ) , 85c 25w input power (p in ) , cw, 50 , 85c, 30 dbm input power (p in ) , cw, vswr 10 :1, v d = 28 v, 85c 23 dbm channel t emperature (t ch ) 275c mounting temperature (30 seconds) 320c storage temperature - 55 to 150 c operation of this device outside the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional operation of the device at these conditions is not implied. recommended operating conditions parameter value drain voltage (v d ) 25 v drain current (i d q ) 17 5 m a (total) gate voltage (v g ) - 2.3 v (typ.) electrical specifications are measured at specified test conditions. specifications are not guaranteed over all recommended operating conditions. electrical specifications test conditions unless otherwise noted: 25 0 c, v d = 2 5 v, i d q = 17 5 m a, v g = - 2.3 v typical , pulsed v d : pp = 1 ms, dc = 1 0 % parameter min typical max units operational frequency range 2.7 3. 7 ghz small signal gain 33 db input return loss >18 db output return loss > 1 2 db output power (pin = 16dbm) 40 .5 db m power added efficiency (pin = 16dbm) 5 4 % im3 @ p out /tone = 30dbm - 25 dbc im5 @ p out /tone = 30dbm - 35 dbc small signal gain temperature coefficient - 0.05 db/ c output power temperature coefficient - 0.00 5 dbm/ c recommended operating voltage : 25 32 v
t ga2583 2.7 C 3.7ghz 10w gan power amplifier preliminary datasheet: rev b 02 - 20 - 1 5 - 3 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com thermal and reliability information parameter test conditions value units thermal resistance ( jc ) (1) t base = 85 c , v d = 25 v , i dq = 175ma pulsed v d : pp = 1ms, dc = 10% 3.51 oc/w channel temperature (t ch ) (under rf drive) t base = 85 c , v d = 25v , i d _drive = 915 ma, p in = 16dbm, p out = 40.5 dbm, p diss = 11.7 w 126 c median lifetime (t m ) 2.9 x 10^ 11 hrs thermal resistance ( jc ) (1) t base = 85 c , v d = 32 v , i dq = 175ma pulsed v d : pp = 1ms, dc = 10% 4.68 oc/w channel temperature (t ch ) (under rf drive) t base = 85 c , v d = 32v , i d _drive = 1035 ma, p in = 16dbm, p out = 41.8dbm, p diss = 17.9w 16 9 c median lifetime (t m ) 2.36 10^ 9 hrs thermal resistance ( jc ) (1) t base = 85 c , v d = 25v, i dq = 175ma , cw 5.15 oc/w channel temperature (t ch ) (under rf drive) t base = 85 c , v d = 25v , i d _drive = 85 0ma, p in = 16dbm, p out = 40.3dbm, p diss = 10.6w 140 c median lifetime (t m ) 5.43 x 10^ 9 hrs thermal resistance ( jc ) (1) t base = 85 c , v d = 32 v, i dq = 175ma , cw 7.1 oc/w channel temperature (t ch ) (under rf drive) t base = 85 c , v d = 32v , i d _drive = 9 70 ma, p in = 16dbm, p out = 41.6dbm, p diss = 16.5w 202 c median lifetime (t m ) 1.06 x 10^7 hrs notes: 1. thermal resistance measured to back of carrier plate. mmic mounted on 40 mils cumo (80/20) carrier using 1.5 mil ausn. median lifetime test conditions: v d = 40 v; failure criteria = 10% reduction in i d _max 1 e+ 04 1e+05 1e+06 1 e+ 07 1 e+ 08 1e+09 1e+10 1 e+ 11 1e+12 1 e+ 13 1e+14 1 e+ 15 1e+16 1 e+ 17 1 e+ 18 25 50 75 100 125 150 175 200 225 250 275 median lifetime, t m (hours) channel temperature, t ch ( ? c) median lifetime vs. channel temperature fet 13
t ga2583 2.7 C 3.7ghz 10w gan power amplifier preliminary datasheet: rev b 02 - 20 - 1 5 - 4 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance typical performance (small signal) 16 18 20 22 24 26 28 30 32 34 36 38 40 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 4 s21 (db) frequency (ghz) gain vs. frequency vs. temperature -40c +25c +85c v d = 25 v, i dq = 175ma -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 4 s11 (db) frequency (ghz) input return loss vs. freq. vs. temp. -40c +25c +85c v d = 25 v, i dq = 175ma -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 4 s22 (db) frequency (ghz) output return loss vs. freq. vs. temp. +85c +25c -40c v d = 25 v, i dq = 175ma 16 18 20 22 24 26 28 30 32 34 36 38 40 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 4 s21 (db) frequency (ghz) gain vs. frequency vs. v d / i d 28v-275ma 28v-175ma 25v-275ma 25v-175ma temp. = +25 c -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 4 s22 (db) frequency (ghz) output return loss vs. freq. vs. v d / i d 25v-175ma 25v-275ma 28v-175ma 28v-275ma temp. = +25 c -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 4 s11 (db) frequency (ghz) input return loss vs. freq. vs. v d / i d 25v-175ma 25v-275ma 28v-175ma 28v-275ma temp. = +25 c
t ga2583 2.7 C 3.7ghz 10w gan power amplifier preliminary datasheet: rev b 02 - 20 - 1 5 - 5 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance (pulsed operation ) 32 34 36 38 40 42 44 2.7 2.9 3.1 3.3 3.5 3.7 p out (dbm) frequency (ghz) output power vs. frequency vs. v d vd=20v vd=25v vd=28v vd=32v pulsed: pp = 1ms, dc = 10 % p in = 16dbm temp. = +25 c i dq = 175ma 42 45 48 51 54 57 60 2.7 2.9 3.1 3.3 3.5 3.7 pae (%) frequency (ghz) pae vs. frequency vs. v d vd=20v vd=25v vd=28v vd=32v pulsed: pp = 1ms, dc = 10 % p in = 16dbm temp. = +25 c i dq = 175ma 32 34 36 38 40 42 44 2.6 2.8 3 3.2 3.4 3.6 p out (dbm) frequency (ghz) output power vs. freq vs. input power 14dbm 15dbm 16dbm 17dbm pulsed: pp = 1ms, dc = 10 % temp. = +25 c v d = 25v, i dq = 175ma 32 34 36 38 40 42 44 2.6 2.8 3 3.2 3.4 3.6 p out (dbm) frequency (ghz) output power vs. freq vs. input power 14dbm 15dbm 16dbm 17dbm pulsed: pp = 1ms, dc = 10 % temp. = +85 c v d = 25v, i dq = 175ma 42 45 48 51 54 57 60 2.6 2.8 3 3.2 3.4 3.6 pae (%) frequency (ghz) pae vs. frequency vs. input power 17dbm 16dbm 15dbm 14dbm pulsed: pp = 1ms, dc = 10 % temp. = +85 c v d = 25v, i d = 175ma 48 50 52 54 56 58 60 2.6 2.8 3 3.2 3.4 3.6 pae (%) frequency (ghz) pae vs. frequency vs. input power 14dbm 15dbm 16dbm 17dbm pulsed: pp = 1ms, dc = 10 % temp. = +25 c v d = 25v, i d = 175ma
t ga2583 2.7 C 3.7ghz 10w gan power amplifier preliminary datasheet: rev b 02 - 20 - 1 5 - 6 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance (pulsed operation ) 32 34 36 38 40 42 44 2.7 2.9 3.1 3.3 3.5 3.7 p out (dbm) frequency (ghz) output power vs. frequency vs. temp. -40c +25c +85c pulsed: pp = 1ms, dc = 10 % p in = 16dbm v d = 25v, i dq = 175ma 42 45 48 51 54 57 60 2.7 2.9 3.1 3.3 3.5 3.7 pae (%) frequency (ghz) pae vs. frequency vs. temperature -40c +25c +85c pulsed: pp = 1ms, dc = 10 % p in = 16dbm v d = 25v, i dq = 175ma 26 28 30 32 34 36 38 40 42 44 0 2 4 6 8 10 12 14 16 18 p out (dbm) input power (dbm) output power vs. input power vs. freq. 2.7ghz 3.1ghz 3.5ghz temp. = +25 c pulsed: pp = 1ms, dc = 10 % v d = 25v, i dq = 175ma 0 10 20 30 40 50 60 0 2 4 6 8 10 12 14 16 18 pae (%) input power (dbm) pae vs. input power vs. frequency 2.7ghz 3.1ghz 3.5ghz pulsed: pp = 1ms, dc = 10 % temp. = +25 c v d = 25v, i dq = 175ma 21 23 25 27 29 31 33 0 2 4 6 8 10 12 14 16 18 gain (db) input power (dbm) gain vs. input power vs. frequency 2.7ghz 3.1ghz 3.5ghz pulsed: pp = 1ms, dc = 10 % temp. = +25 c v d = 25v, i dq = 175ma 100 200 300 400 500 600 700 800 900 1000 1100 0 2 4 6 8 10 12 14 16 18 drain current (ma) input power (dbm) drain current vs. input power vs. freq. 2.7ghz 3.1ghz 3.5ghz temp. = +25 c pulsed: pp = 1ms, dc = 10 % v d = 25v, i dq = 175ma
t ga2583 2.7 C 3.7ghz 10w gan power amplifier preliminary datasheet: rev b 02 - 20 - 1 5 - 7 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance (cw opeartion ) 32 34 36 38 40 42 44 2.7 2.9 3.1 3.3 3.5 3.7 p out (dbm) frequency (ghz) output power vs. frequency vs. v d vd=20v vd=25v vd=28v vd=32v p in = 16dbm temp. = +25 c i dq = 175ma, cw 42 45 48 51 54 57 60 2.7 2.9 3.1 3.3 3.5 3.7 pae (%) frequency (ghz) pae vs. frequency vs. v d vd=20v vd=25v vd=28v vd=32v p in = 16dbm temp. = +25 c i dq = 175ma, cw 32 34 36 38 40 42 44 2.6 2.8 3 3.2 3.4 3.6 p out (dbm) frequency (ghz) output power vs. freq vs. input power 14dbm 15dbm 16dbm 17dbm temp. = +25 c v d = 25v, i dq = 175ma, cw 46 48 50 52 54 56 58 2.6 2.8 3 3.2 3.4 3.6 pae (%) frequency (ghz) pae vs. frequency vs. input power 14dbm 15dbm 16dbm 17dbm temp. = +25 c v d = 25v, i dq = 175ma, cw 32 34 36 38 40 42 44 2.6 2.8 3 3.2 3.4 3.6 p out (dbm) frequency (ghz) output power vs. freq vs. input power 14dbm 15dbm 16dbm 17dbm temp. = +85 c v d = 25v, i dq = 175ma, cw 42 44 46 48 50 52 54 2.6 2.8 3 3.2 3.4 3.6 pae (%) frequency (ghz) pae vs. frequency vs. input power 14dbm 15dbm 16dbm 17dbm temp. = +85 c v d = 25v, i dq = 175ma, cw
t ga2583 2.7 C 3.7ghz 10w gan power amplifier preliminary datasheet: rev b 02 - 20 - 1 5 - 8 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance (cw operation) 32 34 36 38 40 42 44 2.7 2.9 3.1 3.3 3.5 3.7 p out (dbm) frequency (ghz) output power vs. frequency vs. temp. -40c +25c +85c p in = 16dbm v d = 25v, i dq = 175ma, cw 42 45 48 51 54 57 60 2.7 2.9 3.1 3.3 3.5 3.7 pae (%) frequency (ghz) pae vs. frequency vs. temperature -40c +25c +85c p in = 16dbm v d = 25v, i dq = 175ma, cw 21 23 25 27 29 31 33 0 2 4 6 8 10 12 14 16 18 gain (db) input power (dbm) gain vs. input power vs. frequency 2.7ghz 3.1ghz 3.5ghz temp. = +25 c v d = 25v, i dq = 175ma, cw 0 10 20 30 40 50 60 0 2 4 6 8 10 12 14 16 18 pae (%) input power (dbm) pae vs. input power vs. frequency 2.7ghz 3.1ghz 3.5ghz temp. = +25 c v d = 25v, i dq = 175ma, cw 26 28 30 32 34 36 38 40 42 44 0 2 4 6 8 10 12 14 16 18 p out (dbm) input power (dbm) output power vs. input power vs. freq. 2.7ghz 3.1ghz 3.5ghz temp. = +25 c v d = 25v, i dq = 175ma, cw 100 200 300 400 500 600 700 800 900 1000 1100 0 2 4 6 8 10 12 14 16 18 drain current (ma) input power (dbm) drain current vs. input power vs. freq. 2.7ghz 3.1ghz 3.5ghz temp. = + 25 c v d = 25 v, i dq = 175 ma, cw
t ga2583 2.7 C 3.7ghz 10w gan power amplifier preliminary datasheet: rev b 02 - 20 - 1 5 - 9 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance (linearity) -60 -50 -40 -30 -20 -10 0 15 20 25 30 35 40 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. frequency v d = 25v, i dq = 175ma, 10mhz tone spacing 2.7ghz 3.1ghz 3.5ghz temp. = +25 c -90 -75 -60 -45 -30 -15 0 15 20 25 30 35 40 im5 (dbc) output power per tone (dbm) im5 vs. output power vs. frequency v d = 25v, i dq = 175ma, 10mhz tone spacing 2.7ghz 3.1ghz 3.5ghz temp. = +25 c -60 -50 -40 -30 -20 -10 0 15 20 25 30 35 40 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. temperature v d = 25v, i dq = 175ma, 3.1ghz, 10mhz tone spacing - 40 c +25 c +85 c -90 -75 -60 -45 -30 -15 0 15 20 25 30 35 40 im5 (dbc) output power per tone (dbm) im5 vs. output power vs. temperature v d = 25v, i dq = 175ma, 3.1ghz, 10mhz tone spacing - 40 c +25 c +85 c -60 -50 -40 -30 -20 -10 0 15 20 25 30 35 40 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. i dq v d = 25v, 3.1ghz, 10mhz tone spacing 175ma 350ma temp. = +25 c -90 -75 -60 -45 -30 -15 0 15 20 25 30 35 40 im5 (dbc) output power per tone (dbm) im5 vs. output power vs. i dq v d = 25v, 3.1ghz, 10mhz tone spacing 175ma 350ma temp. = +25 c
t ga2583 2.7 C 3.7ghz 10w gan power amplifier preliminary datasheet: rev b 02 - 20 - 1 5 - 10 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance (linearity) -60 -50 -40 -30 -20 -10 0 30 32 34 36 38 40 42 2f 0 output power (dbc) output power per tone (dbm) 2 nd harmonic vs. output power vs. freq. v d = 25v, i dq = 175ma temp. = +25 c 3.5ghz 3.1ghz 2.7ghz -80 -70 -60 -50 -40 -30 -20 -10 0 30 32 34 36 38 40 42 3f 0 output power (dbc) output power per tone (dbm) 3 rd harmonic vs. output power vs. freq. v d = 25v, i dq = 175ma temp. = +25 c 3.5ghz 3.1ghz 2.7ghz -60 -50 -40 -30 -20 -10 0 28 30 32 34 36 38 40 42 2f 0 output power (dbc) output power per tone (dbm) 2 nd harmonic vs. output power vs. temp. freq. = 3.1ghz +85 c +25 c - 40 c v d = 25v, i dq = 175ma -80 -70 -60 -50 -40 -30 -20 -10 0 28 30 32 34 36 38 40 42 3f 0 output power (dbc) output power per tone (dbm) 3 rd harmonic vs. output power vs. temp. freq. = 3.1ghz +85 c +25 c - 40 c v d = 25v, i dq = 175ma -60 -50 -40 -30 -20 -10 0 30 32 34 36 38 40 42 2f 0 output power (dbc) output power per tone (dbm) 2 nd harmonic vs. output power vs. v d /i d . freq. = 3.1ghz temp. = +25 c 25v350ma 25v175ma -80 -70 -60 -50 -40 -30 -20 -10 0 30 32 34 36 38 40 42 3f 0 output power (dbc) output power per tone (dbm) 3 rd harmonic vs. output power vs. v d /i d . freq. = 3.1ghz temp. = +25 c 25v350ma 25v175ma
t ga2583 2.7 C 3.7ghz 10w gan power amplifier preliminary datasheet: rev b 02 - 20 - 1 5 - 11 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com application circuit bias - up procedure 1. set i d limit to 1 .2 a, i g limit to 8 ma 2 . apply - 5.0v to v g 3 . apply + 25 v to v d 4. adjust v g more positive until i dq = 17 5 ma (v g ~ - 2. 3 v typical) 5 . apply rf signal bias - down procedure 1. turn off rf signal 2. reduce v g to - 5.0v. ensure i dq ~ 0ma 3. set v d to 0v 4. turn off v d supp l y 5 . turn off v g supp l y c5 0.01 uf r1 10 ohms c3 0.01 uf r2 10 ohms c4 10 uf 1 3 2 5 4 7 6 j1 rf in j2 rf out v g = -2.3v typical c3 1000 pf c3 1000 pf v d = 25v, i dq = 175ma
t ga2583 2.7 C 3.7ghz 10w gan power amplifier preliminary datasheet: rev b 02 - 20 - 1 5 - 12 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com assembly drawing 1 2 3 4 5 6 7 v d v g v d = 25v, i dq = 175ma v g = -2.3v typical r1 10 ohms c3 0.01 uf r2 10 ohms c4 10 uf c5 0.01 uf rf in rf out c1 1000pf c2 1000pf
t ga2583 2.7 C 3.7ghz 10w gan power amplifier preliminary datasheet: rev b 02 - 20 - 1 5 - 13 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com mechanical drawing & bond pad description unit: millimeters thickness: 0.10 die x, y size tolerance: +/ - 0.050 chip edge to bond pad dimensions are shown to center of pad ground is backside of die bond pad symbol pad size description 1 rf in 0.096 x 0.196 input; matched to 50 ohms ; dc blocked . 2 v g1 0.096 x 0.096 gate voltage 1, b ias network is required; s ee application circuit on page 11 as an example 3, 5 v g 2 0.096 x 0.096 gate voltage 2, b ias network is required; s ee application circuit on page 11 as an example. can be biased on either pad 10 as an exampl 4 v d1 0.096 x 0.096 drain voltage 1, b ias network is required; s e e application circuit on page 11 as an example . 6 v d2 0. 200 x 0.200 drain voltage 2, b ias network is required; s e e application circuit on page 11 as an example. 7 rf out 0.096 x 0.196 output; matched to 50 ohms ; dc blocked. 1 2 3 4 5 6 7
t ga2583 2.7 C 3.7ghz 10w gan power amplifier preliminary datasheet: rev b 02 - 20 - 1 5 - 14 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com assembly notes component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment (i.e. epoxy) can be used in low - power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. reflow process assembly notes: ? use ausn ( 8 0/ 2 0) solder and limit exposure to temperatures above 300 ? c to 3 - 4 minutes, maximum. ? an alloy station or conveyor furna ce with reducing atmosphere should be used. ? do not use any kind of flux. ? coefficient of thermal expansion matching is critical for long - term reliability. ? devices must be stored in a dry nitrogen atmosphere. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonic are critical parameters. ? aluminum wire should not be used. ? devices with small pad sizes should be bonded with 0.0007 - inch wire.
t ga2583 2.7 C 3.7ghz 10w gan power amplifier preliminary datasheet: rev b 02 - 20 - 1 5 - 15 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatsoever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provid ed "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the user. all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant informa tion before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with r egard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life - saving, or life - sustaining applications, or other applications where a failure w ould reasonably be expected to cause severe personal injury or death. contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information about triquint: web: www.triquint.com tel: +1. 972 . 994 . 8465 email: info - sales@triquint.com fax: +1. 972 . 994 . 8504 for technical questions and application information: email: info - products@triquint.com product compliance information esd sensitivity ratings caution! esd - sensitive device esd rating: tbd value: tbd test: human body model (hbm) standard: jedec standard jesd22 - a114 solderability this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp - a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free eccn us department of commerce : e ar99

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